Linear Power Amplifier Module - ANADIGICS
Description
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TM
AWT6275
HELP IMT/WCDMA 3.
4V/27.
5dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.
8
FEATURES
• • InGaP HBT Technology High Efficiency: 43% @ POUT = +27.
5 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm • • • • • • • • • Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.
85 V (+2.
75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package Option: 1.
1 mm Max RoHS Compliant Package, 250 oC MSL-3 HSDPA Capable Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time.
The self-contained 4 mm x 4 mm x 1.
5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
AWT6275
M20 Package 10 Pin 4 mm x 4 mm x 1.
1 mm Surface Mount Module
APPLICATIONS
PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for higher output power in UMTS handsets.
The PA module is optimized for VREF = +2.
85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.
Selectable
GND at slug (pad) VCC RFIN GND
1 2 3 Bias Control 10 VCC 9 8 7 6
GND RFOUT GND GND
VMODE 4 VREF 5
Figure 1: Block Diagram
07/2005
AWT6275
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GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND
10 VCC 9 8 7 6 GND RFOUT GND GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 NAME V CC RFIN GND VMODE VREF GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Mode Control Voltage Reference Voltage Ground Ground RF Output Ground Supply Voltage
2
PRELIMINARY DATA SHEET - Rev 1.
8 07/2005
AWT6275
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DataSheet4U.
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ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Max...
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