Silicon NPN Transistor - Panasonic Semiconductor
Description
Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
■ Features • Low noise figure NF
0.
40+–00.
.
0150 3
0.
16+–00.
.
0160
1.
50–+00.
.
0255 2.
8–+00.
.
32
• High transition frequency fT
0.
4±0.
2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.
95) (0.
95)
5˚
(0.
65)
1.
9±0.
1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.
90+–00.
.
0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
V
c e.
d ty Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
0 to 0.
1 1.
1–+00.
.
12 1.
1–+00.
.
13
V
a e cle con Collector current
IC
80
mA
lifecy , dis Collector power dissipation *
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.
0 mm in thickness
Marking Symbol: 3K
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
ain onincludestyfpoell,opwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
Min Typ Max Unit
M is con inten Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
15
V
/Dis , ma Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
10
V
D ance type Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1
µA
ten ce Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
1
µA
Main tenan Forward current transfer ratio
hFE VCE = 8 V, IC = 20 mA
110
250
ain Transition frequency
fT
VCE = 8 V, IC = 20 mA, f = 800 MHz
5
6
GHz
d m Collector output capacitance (plane (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.
9 1.
2
pF
Foward transfer gain
S21e2 VCE = 8 V, IC = 20 mA, f = 800 MHz
7.
5 10.
0
dB
Maximum unilateral power gain
GU...
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