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K2543

Toshiba Semiconductor
Part Number K2543
Manufacturer Toshiba Semiconductor
Description 2SK2543
Published Nov 27, 2007
Detailed Description 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications U...
Datasheet PDF File K2543 PDF File

K2543
K2543

Overview
2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
75 Ω (typ.
) z High forward transfer admittance : |Yfs| = 7.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 V 500 V ±30 V 8 A 32 A 40 W 312 mJ 8 A 4 mJ 150 °C −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads ...


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