2SK3642 - NEC
Description
DATA SHEET
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MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3642-ZK PACKAGE TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance RDS(on)1 = 9.
5 mΩ MAX.
(VGS = 10 V, ID = 32 A) RDS(on)2 = 16 mΩ MAX.
(VGS = 4.
5 V, ID = 18 A) • Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 ±20 ±64 ±190 36 1.
0 150 –55 to + 150 25 62
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D15970EJ4V0DS00 (4th edition) Date Published January 2005 NS CP(K) Printed in Japan
The mark
shows major revised points.
2002
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2SK3642
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 32 A VGS...
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