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MG600Q1US61

Part Number	MG600Q1US61
Manufacturer	Toshiba Semiconductor
Description	IGBT Module Silicon N Channel IGBT
Published	Oct 4, 2007
Detailed Description	www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applicatio...
Datasheet	MG600Q1US61 PDF File

Overview

www.
DataSheet4U.
com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications · · · · · High input impedance High speed: tf = 0.
3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.
6 V (max) The electrodes are isolated from case.
Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.
) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting ¾ ¾ Rating 1200 ±20 600 600 5400 150 -40 to 125 2500 (AC 1 min...

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