DatasheetsPDF.com

KHB019N20F2

KEC
Part Number KHB019N20F2
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Oct 3, 2007
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB019N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Desc...
Datasheet PDF File KHB019N20F2 PDF File

KHB019N20F2
KHB019N20F2

Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA KHB019N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB019N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC converters and switching mode power supplies.
FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.
18 Qg(typ.
)=35nC @VGS = 10V 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 4.
5 + 0.
2 _ 0.
2 2.
4 + _ 0.
2 9.
2 + 1.
GATE 2.
DRAIN 3.
SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB CHARACTERISTIC SYMBOL KHB019N20P1 KHB019N20F1 UNIT KHB019N20F2 V V 19* 12.
1* 76* A K L E KHB019N20F1 A F C B Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 140 1.
12 19 12.
1 76 30 O Drain-Source Voltage VDSS 200 DIM MILLIMETERS M J R 250 14 4.
5 50 0.
4 150 -55 150 mJ D mJ V/ns Q 1 N N H 2 3 A B C D E F G H J K L M N O Q R _ 0.
2 10.
16 + _ 0.
2 15.
87 + _ 0.
2 2.
54 + _ 0.
1 0.
8 + _ 0.
1 3.
18 + _ 0.
1 3.
3 + _ 12.
57 + 0.
2 _ 0.
1 0.
5 + 13.
0 MAX _ 0.
1 3.
23 + 1.
47 MAX 1.
47 MAX _ 0.
2 2.
54 + _ 0.
2 6.
68 + _ 0.
2 4.
7 + _ 0.
2 2.
76 + W W/ G 1.
GATE 2.
DRAIN 3.
SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB019N20F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA 0.
89 0.
5 62.
5 2.
5 62.
5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature.
K L L R J PIN C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)