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6HN04MH

Sanyo Semicon Device
Part Number 6HN04MH
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Published Oct 1, 2007
Detailed Description www.DataSheet4U.com Ordering number : ENA0365 6HN04MH N-Channel Silicon MOSFET 6HN04MH Features • General-Purpose S...
Datasheet PDF File 6HN04MH PDF File

6HN04MH
6HN04MH



Overview
www.
DataSheet4U.
com Ordering number : ENA0365 6HN04MH N-Channel Silicon MOSFET 6HN04MH Features • General-Purpose Switching Device Applications 4V drive.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) Conditions Ratings 60 ±20 200 800 0.
6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=10V ID=50mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings min 60 1 ±10 1.
2 140 240 1.
8 2.
6 27 8.
6 4.
4 13.
5 11.
5 81 39 2.
4 3.
7 2.
6 typ max Unit V µA µA V mS Ω Ω pF pF pF ns ns ns ns Marking : FB Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications.
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