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Pb Free Plating Product
CORPORATION
G2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
BVDSS RDS(ON) ID
20V 32m 5. 3A
The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications.
Description
Features
Capable of 2. 5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System.
Applications
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2. 70 3. 10 2. 40 2. 80 1. 40 1. 60 0. 35 0. 50 0 0. 10 0. 45 0. 55
REF. G H K J L M
Millimeter Min. Max. 1. 90 REF. 1. 00 1. 30 0. 10 0. 20 0. 40 0. 85 1. 15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4. 5V 3 Continuous Drain Current , VGS@4. 5V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 20 12 5. 3 4. 3 10 1. 38 0. 01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
Unless otherwise specified)
Min. 20 0. 5 Typ. 0. 1 13 8. 7 1. 5 3. 6 6 14 18. 4 2. 8 603 144 111 Max. 1. 2 100 1 10 30 35 50 90 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=250uA Reference to 25 VDS=5. 0V, ID=5. 3A VGS= 12V VDS=20V, VGS=0 VDS=16V, VGS=0 ID=5. 5A, VGS =10V ID=5. 3A, VGS =4. 5V ID=2. 6A, VGS =2. 5V ID=1. 0A, VGS =1. 8V ID=5. 3A VDS=10V VGS=4. 5V VDS=15V ID=1A VGS=10V RG=2 RD=15 VGS=0V VDS=15V f=1. 0MHz , ID=1mA VDS= VGS, ID=250uA
Symbol BVDSS BVDSS/ Tj VGS(th) gfs IGSS ) ) IDSS
Gate Thresh...
G2306 PDF File
