N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM
Description
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Pb Free Plating Product
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
G 111 K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
55V 2 640mA
The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The G111K is universally used for all commercial-industrial applications.
Description
Features
*Simple Drive Requirement *Small Package Outline *RoHS Compliant
Package Dimensions
REF.
A B C D E F
Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55
REF.
G H K J L M
Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 55 20 640 500 950 1.
38 0.
01 -55 ~ +150 Ratings 90
Unit V V mA mA mA W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
1/4
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
55 0.
5 Typ.
0.
06 600 1 0.
5 0.
5 12 10 56 29 32 8 6 Max.
2.
0 10 1 100 2 4 1.
6 50 pF ns nC Unit V V/ V mS uA uA uA Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=1mA VDS=10V, ID=600mA VGS= 20V
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
VDS=55V, VGS=0 VDS=40V, VGS=0 VGS=10V, ID=500mA VGS=4.
5V, ID=500mA ID=600mA VDS=50V VGS=4.
5V VDS=30V ID=600mA VGS=10V RG=3.
3 RD=52 VGS=0V VDS=25V f=1.
0MHz
Static Drain-Source On-Resistance Tota...
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