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NTE359

NTE

Silicon NPN Transistor RF & Microwave Transistor - NTE

NTE359
NTE359

PDF File NTE359 PDF File


Description
www.
DataSheet4U.
com NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.
2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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35V Collector−Base Voltage, VCB .
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65V Emitter−Base Voltage, Veb .
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4V Collector Current−Continuous, IC .
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3A Total Device Dissipation @ 25°C, Pd .
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30W Derate Above 25°C .
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171mW/°C Storage Temperature Range, Tstg .
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−65 to °C +200 Operating Junction Temperature Range, TJ .
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−65 to °C +200 Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Off Characteristics Collector−Emitter Breakdown Voltage Collector−Emitter Sustaining Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current On Characteristics DC Current Gain Hfe IC = 200mA, VCE = 5.
0V − 5 − − V(Br)CEO IC = 200mA, IB = 0, Note 1 V(Br)CES IC = 200mA, VBE = 0 V(Br)ebo IE = 10mA, IC = 0 ICBO VCB = 30 V, IE = 0 − − − − 35 65 4 1 − − − − V V V mA Symbol Test Conditions Min Typ Max Unit Note 1.
Pulsed through 25mH inductor Electrical Characteristics (Con...


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