Silicon NPN Transistor - NTE
Description
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NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
Description: The NTE347 is designed for 13.
6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.
Features: D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area.
The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.
6 volt, 175MHz Characteristics− Output Power = 3.
0 Watts Minimum Gain = 8.
2dB Efficiency = 50% Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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18V Collector−Base Voltage, VCB .
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36V Emitter−Base Voltage, VEB .
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4.
0V Continuous Collector Current, IC .
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0.
6A Total Device Dissipation (TA = +25°C), PD .
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15W Derate Above 25°C .
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86mW/°C Operating Junction Temperature Range, TJ .
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−65° to +200°C Storage Temperature Range, Tstg .
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−65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ...
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