DatasheetsPDF.com

SIGC57T120R3L

Infineon Technologies
Part Number SIGC57T120R3L
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-of...
Datasheet PDF File SIGC57T120R3L PDF File

SIGC57T120R3L
SIGC57T120R3L

Overview
www.
DataSheet4U.
com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC57T120R3L VCE 1200V ICn 50A Die Size 7.
6 x 7.
53 mm2 Package sawn on foil Ordering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.
6 x 7.
53 6.
08 x 6.
05 1.
14 x 1.
14 57.
2 / 42.
8 120 150 90 246 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7661B, Edition 2, 04.
09.
03 SIGC57T120R3L MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 150 ±20 -55 .
.
.
+150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min.
VGE=0V , IC= 2mA VGE=15V, IC =50A IC =2mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V 4 1200 1.
35 5.
0 1.
65 5.
8 2.
05 6.
5 6.
69 600 µA nA Ω V Value typ.
max...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)