DatasheetsPDF.com

SIGC42T120C

Infineon Technologies
Part Number SIGC42T120C
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  ...
Datasheet PDF File SIGC42T120C PDF File

SIGC42T120C
SIGC42T120C

Overview
IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling SIGC42T120C This chip is used for:  power module BUP 314 Applications:  drives C G E Chip Type SIGC42T120C VCE IC 1200V 25A Die Size 6.
59 x 6.
49 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.
59 x 6.
49 2 x ( 1.
58 x 2.
18 ) 1.
06 x 0.
65 mm2 42.
8 200 µm 150 mm 334 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epox...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)