IGBT - Infineon Technologies
Description
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SIGC12T120L
IGBT Chip
FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC12T120L
VCE 1200V
ICn 8A
Die Size 3.
54 x 3.
5 mm2
Package sawn on foil
Ordering Code Q67050A4269-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.
54 x 3.
5 2.
03 x 2.
03 1.
1 x 0.
7 12.
4 / 6.
9 120 150 0 1200 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd
2
mm
Edited by INFINEON Technologies AI PS DD HV3, L7621B, Edition 2, 04.
09.
03
SIGC12T120L
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 1200
1)
Unit V A A V °C
24 ±20 -55 .
.
.
+150
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min.
VGE=0V , IC= 0.
5mA VGE=15V, IC =8A IC =300µA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V -1200 1.
35 5.
0 1.
65 5.
8 2.
05 6.
5 1.
07 120 µA nA Ω V Value typ.
max.
Unit
ELECTRICAL CHARACTERIS...
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