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SIGC12T120

Infineon Technologies
Part Number SIGC12T120
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC12T120 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short...
Datasheet PDF File SIGC12T120 PDF File

SIGC12T120
SIGC12T120

Overview
www.
DataSheet4U.
com SIGC12T120 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3.
54 x 3.
5 mm2 Package sawn on foil Ordering Code Q67050A4102-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.
54 x 3.
5 2.
028 x 2.
028 1.
107 x 0.
702 12.
4 / 6.
9 140 150 0 1200 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µ...


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