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SIGC109T120R3

Infineon Technologies
Part Number SIGC109T120R3
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description com Preliminary SIGC109T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-of...
Datasheet PDF File SIGC109T120R3 PDF File

SIGC109T120R3
SIGC109T120R3

Overview
...f losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3 VCE ICn Die Size 10.
47 x 10.
44 mm2 Package sawn on foil Ordering Code Q67050A4108-A001 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.
47 x 10.
44 8x(2.
114 x 4.
391) 1.
139 x 1.
139 109.
3 / 85.
8 140 150 90 124 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –sys...


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