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HER102G

Won-Top Electronics
Part Number HER102G
Manufacturer Won-Top Electronics
Description (HER101G - HER108G) 1.0A GLASS PASSIVATED ULTRAFAST DIODE
Published Sep 14, 2007
Detailed Description www.DataSheet4U.com WTE POWER SEMICONDUCTORS HER101G – HER108G Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! !...
Datasheet PDF File HER102G PDF File

HER102G
HER102G

Overview
www.
DataSheet4U.
com WTE POWER SEMICONDUCTORS HER101G – HER108G Pb 1.
0A GLASS PASSIVATED ULTRAFAST DIODE Features ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.
34 grams (approx.
) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D DO-41 Dim Min Max 25.
4 — A 4.
06 5.
21 B 0.
71 0.
864 C 2.
00 2.
72 D All Dimensions in mm C Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER 101G 50 35 HER 102G 100 70 @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.
3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 1.
0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO HER 103G 200 140 HER 104G 300 210 HER 105G 400 280 HER 106G 600 420 HER 107G 800 560 HER 108G 1000 700 Unit V V A 1.
0 IFSM VFM IRM trr Cj Tj TSTG 50 20 1.
0 30 1.
3 5.
0 100 75 15 -65 to +150 -65 to +150 1.
7 A V µA nS pF °C °C Note: 1.
Leads maintained at ambient temperature at a distance of 9.
5mm from the case 2.
Measured with IF = 0.
5A, IR = 1.
0A, IRR = 0.
25A.
See figure 5.
3.
Measured at 1.
0 MHz and applied reverse voltage of 4.
0V D.
C.
HER101G – HER108G 1 of 4 © 2006 Won-Top Electronics  I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive...


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