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SPP10N10L

Infineon Technologies
Part Number SPP10N10L
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1 ...
Datasheet PDF File SPP10N10L PDF File

SPP10N10L
SPP10N10L

Overview
www.
DataSheet4U.
com SPI10N10L SPP10N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID PG-TO262-3-1  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 154 10.
3 V m A PG-TO220-3-1 Type SPP10N10L SPI10N10L Package PG-TO220-3-1 PG-TO262-3-1 Ordering Code Q67042-S4163 Q67042-S4162 Marking 10N10L 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.
3 8.
1 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 42.
2 60 6 ±20 50 -55.
.
.
+175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.
3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.
3A, VDS =80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.
2.
1 Page 1 2005-02-14 SPI10N10L SPP10N10L Thermal Characteristics Parameter Cha...


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