OptiMOS Power-Transistor - Infineon Technologies
Description
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SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max.
SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 2.
7 100
P- TO220 -3-1
V mΩ A
• Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature • Avalanche rated • dv/dt rated
Type Package SPP100N03S2L-03 P- TO220 -3-1 SPB100N03S2L-03 P- TO263 -3-2 SPI100N03S2L-03 P- TO262 -3-1
Ordering Code Q67042-S4056 Q67042-S4055 Q67042-S4094
Marking PN03L03 PN03L03 PN03L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 100 100 400 810 30 6 ±20 300 -55.
.
.
+175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min.
footprint @ 6 cm2 cooling area
3)
Symbol min.
RthJC RthJA RthJA -
Values typ.
0.
3 max.
0.
5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.
2
Values typ.
1.
6 max.
2
Unit
V
Gate threshold voltage, VGS = V DS
ID = 250 µA
Zero gate voltage drain current
V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C
µA 0.
01 1 1 1 100 100 nA mΩ 2.
8 2.
5 2.
2 1.
9 3.
7 3.
4 3 2.
7
Gate-source leakage current
V GS=20V, VDS=0V
Drain...
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