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IRHMJ3250

International Rectifier
Part Number IRHMJ3250
Manufacturer International Rectifier
Description (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Published Sep 10, 2007
Detailed Description www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ...
Datasheet PDF File IRHMJ3250 PDF File

IRHMJ3250
IRHMJ3250

Overview
www.
DataSheet4U.
com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
10 Ω 0.
10 Ω 0.
10 Ω 0.
10 Ω ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg.
Mounting Surface Temp.
Weight For footnotes refer to the last page 26 16 104 150 1.
2 ±20 500 26 15 5.
0 -55 to 150 300 (for 5s) 8.
0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 12/24/04 IRHMJ7250 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS D...


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