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GJSD1803

Part Number	GJSD1803
Manufacturer	GTM
Description	NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Published	Sep 6, 2007
Detailed Description	www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1803 Description Features NP N EP ITAXI AL P...
Datasheet	GJSD1803 PDF File

Overview

www.
DataSheet4U.
com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1803 Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
*Low collector-to-emitter saturation voltage.
*High current and high fT *Excellent linearity of hFE *Fast switching time Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Junction Temp...

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