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GI60L03

Part Number	GI60L03
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE :2005/10/19B GI60N03 Description N-C...
Datasheet	GI60L03 PDF File

Overview

com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE :2005/10/19B GI60N03 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 16.
5m 55A The GI60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
...

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