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KHB2D0N60P1

KEC semiconductor
Part Number KHB2D0N60P1
Manufacturer KEC semiconductor
Description (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
Published Sep 3, 2007
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Descrip...
Datasheet PDF File KHB2D0N60P1 PDF File

KHB2D0N60P1
KHB2D0N60P1


Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
A O C F E G B Q I DIM MILLIMETERS _ 0.
2 9.
9 + A 15.
95 MAX B 1.
3+0.
1/-0.
05 C _ 0.
1 D 0.
8 + _ 0.
2 E 3.
6 + _ 0.
1 F 2.
8 + 3.
7 G H 0.
5+0.
1/-0.
05 1.
5 I _ 0.
3 13.
08 + J K 1.
46 _ 0.
1 1.
4 + L _ 0.
1 1.
27+ M _ 0.
2 2.
54 + N _ 0.
2 4.
5 + O _ 0.
2 2.
4 + P _ 0.
2 9.
2 + Q FEATURES VDSS= 600V, ID= 2.
0A Drain-Source ON Resistance : RDS(ON)=5.
0 @VGS = 10V K M L J D N N P Qg(typ.
) = 10.
9nC H 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) RATING SYMBOL KHB2D0N60P1 KHB2D0N60F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 54 0.
43 150 -55 150 2.
0 1.
2 8.
0 120 5.
4 5.
5 23 0.
18 600 30 2.
0* 1.
2* 8.
0* mJ K TO-220AB UNIT V A C F O E G P V A B mJ V/ns W W/ L J D M M H Q DIM MILLIMETERS _ 0.
2 A 10.
16 + _ 0.
2 B 15.
87 + _ 0.
2 C 2.
54 + _ 0.
1 D 0.
8 + _ 0.
1 E 3.
18 + _ 0.
1 F 3.
3 + _ 0.
2 G 12.
57 + _ 0.
1 0.
5 + H J 13.
0 MAX _ 0.
1 K 3.
23 + L 1.
47 MAX _ 0.
2 2.
54 + M _ 0.
2 N 4.
7 + _ 0.
2 O 6.
68 + P 6.
5 _ 0.
2 Q 2.
76 + Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient N 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE RthJC RthCS RthJA 2.
32 0.
5 62.
5 5.
5 62.
5 /W /W /W TO-220IS D * : Drain current limited by maximum junction temperature.
G S 2006.
1.
13 Revision No : 0 1/7 www.
DataSheet4U.
com KHB2D0N60P1/F1 ) TEST CONDITION MIN.
TYP.
MAX.
UNIT ELECTRICAL CHARACTERISTI...


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