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IRF1010EPBF

International Rectifier
Part Number IRF1010EPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 28, 2007
Detailed Description l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast ...
Datasheet PDF File IRF1010EPBF PDF File

IRF1010EPBF
IRF1010EPBF

Overview
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to ...


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