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IRF7484Q

International Rectifier
Part Number IRF7484Q
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 94803A AUTOMOTIVE MOSFET Typical Applications O O O Relay replacement Anti-lock Braking Syst...
Datasheet PDF File IRF7484Q PDF File

IRF7484Q
IRF7484Q


Overview
www.
DataSheet4U.
com PD - 94803A AUTOMOTIVE MOSFET Typical Applications O O O Relay replacement Anti-lock Braking System Air Bag Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET IRF7484Q ID 14A VDSS RDS(on) max (mW) 40V 10@VGS = 7.
0V Benefits O O O O S S 1 2 3 4 8 7 A A D D D D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy„ Avalanche Current Repetitive Avalanche Energy† Junction and Storage Temperature Range Max.
14 11 110 2.
5 0.
02 ± 8.
0 230 See Fig.
16c, 16d, 19, 20 -55 to + 150 Units A W W/°C V mJ A mJ °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ.
––– ––– Max.
20 50 Units °C/W www.
irf.
com 1 01/04/05 IRF7484Q Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reve...


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