Band-switching diode - NXP
Description
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D749
BA277-01 Band-switching diode
Product specification Supersedes data of 2001 Sep 07 2002 Oct 29
Philips Semiconductors
Product specification
Band-switching diode
FEATURES • Small plastic SMD package • Continuous reverse voltage: max.
35 V • Continuous forward current: max.
100 mA • Low diode capacitance: max.
1.
2 pF • Low diode forward resistance: max.
0.
7 Ω.
APPLICATIONS • Low loss band switching in VHF television tuners • Surface mount band-switching circuits.
DESCRIPTION Planar high performance band-switching diode in a small SOD723 SMD plastic package.
PINNING
BA277-01
handbook, halfpage
Marking code: M2.
Fig.
1
PIN 1 2
1 Top view
DESCRIPTION cathode anode
2
MAM399
Simplified outline (SOD723) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS − − − −65 −65 MIN.
MAX.
35 100 315 +150 +150 V mA mW °C °C UNIT
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR Cd rD Note 1.
Guaranteed on AQL basis: inspection level S4, AQL 1.
0.
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 190 UNIT K/W PARAMETER forward voltage reverse current diode capacitance diode forward resistance IF = 10 mA VR = 25 V VR = 20 V; Tamb = 75 °C f = 1 MHz; VR = 6 V; see Fig.
2 IF = 2 mA; f = 100 MHz; note 1; see Fig.
3 CONDITIONS 1 50 1 1.
2 0.
7 MAX.
V nA µA pF Ω UNIT
2002 Oct 29
2
Philips Semiconductors
Product specification
Band-switching diode
GRAPHICAL DATA
BA277-01
handbook, halfpage
10
MGL433
handbook, halfpage
2.
5
MGL432
Cd (pF)
rD (Ω) 2.
0
1.
5 1 1.
0
0.
5
10−1
1
10
VR (V)
102
0 10−1
1
IF (mA)
10
f = 1 MHz; Tj = 25 °C.
f = 100 MHz; Tj = 25 °C.
Fig.
2
Diode capacitance as a function of rever...
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