(DTB723YE / DTB723YM) Digital transistors - Rohm
Description
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DTB723YE / DTB723YM
Transistors
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB723YE / DTB723YM
zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm)
DTB723YE
1.
6 0.
3
(3)
0.
8 1.
6
0.
7 0.
55
0.
2
0.
22
(1)(2)
0.
8 1.
2
zFeature 1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation, making the device design easy.
zStructure PNP epitaxial plannar silicon transistor (Resistor built-in type)
0.
2 0.
5 0.
5
0.
2
0.
15
0.
1Min.
(2)
(1)
EMT3 JEITA No.
(SC-75A) JEDEC No.
1.
0
(1) GND (2) IN (3) OUT
Each lead has same dimensions
Abbreviated symbol : M52
DTB723YM
0.
2
1.
2 0.
32
(3)
0.
4 0.
4 0.
8
0.
13 0.
5
(1) IN (2) GND (3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : M52
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature
∗1 ∗2
zPackaging specifications
Limits
Package
Unit V V mA mW C
C
EMT3
Taping
VMT3
Taping
Symbol VCC VIN IC (max) PD Tj Tstg
DTB723YE DTB723YM −30 −15 to +5 −200 150 150 −55 to +150
Packaging type Code
TL 3000
T2L 8000 −
Part No.
DTB723YE DTB723YM
Basic ordering unit (pieces)
−
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio
∗ Characteristics of built-in transistor.
zEquivalent circuit
Max.
−0.
3 − −300 −3.
0 −500 − − 2.
86 5.
5 Unit V ...
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