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AO6409L

Alpha & Omega Semiconductors
Part Number AO6409L
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Jul 10, 2007
Detailed Description Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Descriptio...
Datasheet PDF File AO6409L PDF File

AO6409L
AO6409L


Overview
Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
AO6409L ( Green Product ) is offered in a lead-free package.
Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.
5V) RDS(ON) < 56mΩ (VGS = -2.
5V) RDS(ON) < 75mΩ (VGS = -1.
8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www.
DataSheet4U.
com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.
0 -4.
2 -30 2 1.
28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.
5V VDS=0V, VGS=±8V VDS=VGS ID=-250 µA VGS=-4.
5V, V DS=-5V VGS=-4.
5V, I D=-5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-2.
5V, I D=-4A VGS=-1.
8V, I D=-2A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5A 8 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.
3 -25 37 48 46 57 16 -0.
78 -1 -2.
2 1450 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 205 160 6.
5 17.
2 VGS=-4.
5V, V DS=-10V, I D=-5A 1.
3 4.
5 9 VGS=-4.
5V, V DS=-10V, RL=2.
0Ω, RGEN=3Ω IF=-5A, dI/dt=100A/ µs IF=-5A, dI/dt=100A/ µs 14 91 31 33 14 45 60 56 75 -0.
55 Min -20 -1 -5 ±1 ±10 -1 A mΩ mΩ...


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