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AO6408

Alpha & Omega Semiconductors
Part Number AO6408
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jul 10, 2007
Detailed Description AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6408 uses advanced trench technology...
Datasheet PDF File AO6408 PDF File

AO6408
AO6408


Overview
AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
It offers operation over a wide gate drive range from 1.
8V to 12V.
It is ESD protected.
This device is suitable for use as a load switch.
Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications).
AO6408L is a Green Product ordering option.
AO6408 and AO6408L are electrically identical.
Features VDS (V) = 20V (VGS = 10V) ID = 8.
8A RDS(ON) < 18m Ω (VGS = 10V) RDS(ON) < 20m Ω (VGS = 4.
5V) RDS(ON) < 25m Ω (VGS = 2.
5V) RDS(ON) < 32m Ω (VGS = 1.
8V) ESD Rating: 2000V HBM TSOP-6 Top View www.
DataSheet4U.
com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 20 ±12 8.
8 7 40 2 1.
28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8.
8A TJ=125°C RDS(ON) VGS=4.
5V, ID=8A VGS=2.
5V, ID=6A VGS=1.
8V, ID=4A Forward Transconductance VDS=5V, ID=8.
8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance ±1...


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