MITSUBISHI SEMICONDUCTOR
BA01207
Specifications are subject to change without notice.
GaAs HBT HYBRID IC
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.
Outline Drawing
unit : milimeter 1 8 7 6 4 4. 5 5 1. 5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND
FEATURES
Low voltage Vc =3. 5V High power Po=27. 5dBm High gain Gp=27. 5dB@Po=27. 5dBm 2stage amplifier Internal input* and output matching
*Use DC block for input port
2 3
1. 45
APPLICATION
N-CDMA (Spreading chip rate is 1. 2288Mcps, modulation is OQPSK) hand set.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. ...
BA01207 PDF File
