PNP Transistor - Zetex Semiconductors
Description
ZXTP25140BFH 140V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.
25W
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.
The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
www.
DataSheet4U.
com
• • •
High power dissipation SOT23 package 180V forward blocking voltage Low saturation voltage
E
Applications
• • DC-DC converters High side switching
Ordering information
Device ZXTP25140BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000
Pinout - top view
Device marking
026
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
1
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zetex.
com
ZXTP25140BFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at TA=25°C (a) Linear derating factor Power dissipation at TA=25°C (b) Linear derating factor Power dissipation at TA=25°C (c) Linear derating factor Power dissipation at TA=25°C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit -180 -180 -140 -7 -7 -1 -3 0.
73 5.
84 1.
05 8.
4 1.
25 9.
6 1.
81 14.
5 -55 to 150 Unit V V V V V A A W mW/°C W mW/°C W mW/°C W mW/°C °C
PD
PD
PD
Tj, Tstg
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R⍜JA R⍜JA R⍜JA R⍜JA Limit 171 119 100 69 Unit °C/W °C/W °C/W °C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) Mounted on 25mm x 25mm x 1.
6mm FR4 PCB with a high coverage...
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