|
Part Number
|
IRGIB10B60KD1 |
|
Manufacturer
|
International Rectifier |
|
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
|
Published
|
Jun 9, 2007 |
|
Datasheet
|
 IRGIB10B60KD1 PDF File
|
Features
• Low VCE (on) Non Punch Through IGBT Technology
.
• Low Diode VF
.
• 10µs Short Circuit Capability
.
• Square RBSOA
.
• Ultrasoft Diode Reverse Recovery Characteristics
.
• Positive VCE (on) Temperature Coefficient
.
• Maximum Junction Temperature Rated a...
Similar Datasheet
INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ
