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AO4817

Alpha & Omega Semiconductors
Part Number AO4817
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel MOSFET
Published Jun 7, 2007
Detailed Description AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4817 uses advanced trench techn...
Datasheet PDF File AO4817 PDF File

AO4817
AO4817

Overview
AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
The device is ESD protected.
Standard Product AO4817 is Pb-free (meets ROHS & Sony 259 specifications).
AO4817L is a Green Product ordering option.
AO4817 and AO4817L are electrically identical.
Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.
5KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 www.
DataSheet4U.
com G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -8 -6.
9 -40 2 1.
44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 50 73 31 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4817 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.
5V, ID=-4A VDS=-5V, ID=-8A Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-8A TJ=125°C -1 -40 14.
1 20 17.
1 44 15 -1 -2.
6 1760 360 255 6.
4 30 7 8 12.
5 10.
5 40 23 24 16 2200 18 25 21 -2.
8 Min -30 -1 -5 ±1 -3 Typ Max Units V µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns 30 ns ...


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