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AO4816

Alpha & Omega Semiconductors
Part Number AO4816
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel MOSFET
Published Jun 7, 2007
Detailed Description AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4816 uses advanced trench techn...
Datasheet PDF File AO4816 PDF File

AO4816
AO4816

Overview
AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
This dual device is suitable for use as a load switch or in PWM applications.
Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications).
AO4816L is a Green Product ordering option.
AO4816 and AO4816L are electrically identical.
Features VDS (V) = 30V ID = 8.
5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.
5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.
DataSheet4U.
com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM Power Dissipation TA=25°C TA=70°C PD TJ, TSTG Maximum 30 ±25 8.
5 6.
5 40 2 1.
28 -55 to 150 Units V V A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 33 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4816 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=20V, I D=8.
5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, I D=8.
5A VGS=4.
5V, I D=5A gFS VSD IS Forward Transconductance VDS=5V, ID=10A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1.
5 30 13.
5 17.
5 16 36 17 0.
76 1 4.
3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.
7 16.
5 VGS=10V, VDS=15V, I D=8.
5A 8.
6 2.
5 4.
8 5.
4 VGS=10V, VDS=15V, RL=1.
8Ω, RGEN=3Ω IF=8.
5A, dI/dt=100A/ µs IF=8.
5A, dI/dt=100A/ µs 5.
1 14.
4 3.
7 16.
9 6.
6 17 22 20 46 2.
4 Min 30 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC n...


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