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IRFZ24VSPbF

Part Number	IRFZ24VSPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 5, 2007
Detailed Description	PD - 95524 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Te...
Datasheet	IRFZ24VSPbF PDF File

Overview

PD - 95524 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET® Power MOSFET D IRFZ24VSPbF IRFZ24VLPbF VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The...

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IRFZ24VSPbF HEXFET Power MOSFET - International Rectifier

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