SMPS MOSFET - International Rectifier
Description
PD- 95280
SMPS MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
IRF7478PbF
HEXFET® Power MOSFET
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V 30@VGS = 4.
5V
ID
4.
2A 3.
5A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
www.
DataSheet4U.
com
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
7.
0 5.
6 56 2.
5 0.
02 ± 20 3.
7 -55 to + 150 300 (1.
6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.
irf.
com
1
09/21/04
IRF7478PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
60 ––– ––– ––– 1.
0 ––– ––– ––– ––– Typ.
––– 0.
065 20 23 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 26 VGS = 10V, ID = 4.
2A mΩ 30 VGS = 4.
5V, ID = 3.
5A 3.
0 V VDS = VGS, ID = 250µA 20 VDS = 48V, VGS = 0V µA 100 VDS = 48V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total G...
Similar Datasheet
