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2N6052

Part Number	2N6052
Manufacturer	Microsemi Corporation
Description	PNP DARLINGTON POWER SILICON TRANSISTOR
Published	Jun 4, 2007
Detailed Description	TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified L...
Datasheet	2N6052 PDF File

Overview

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 www.
DataSheet4U.
com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.
0 0.
2 12 150 75 -55 to +175 Max.
1.
0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Der...

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