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2N5109

Part Number	2N5109
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Jun 4, 2007
Detailed Description	140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCR...
Datasheet	2N5109 PDF File

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.
2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1.
Emitter 2.
Base 3.
Collector TO-39 DESCRIPTION: www.
DataSheet4U.
com The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Coll...

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