600V N-Channel MOSFET - Fairchild Semiconductor
Description
FQB3N60C 600V N-Channel MOSFET
May 2006
QFET
FQB3N60C
600V N-Channel MOSFET Features
• 3A, 600V, RDS(on) = 3.
4Ω @ VGS = 10 V • Low gate charge ( typical 10.
5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D D
G
S
D2-PAK
FQB Series
G
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FQB3N60C
600 3 1.
8 12 ±30 150 3 7.
5 4.
5 75 0.
62 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA* RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
1.
67 40 62.
5
Unit
°C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation FQB3N60C REV.
A1
1
www.
fairchildsemi.
com
FQB3N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB3N60C
Device
FQB3N60CTM
Package
D2-PAK
TC = 25°C unless otherwi...
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