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IRF7343PBF

Part Number	IRF7343PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface ...
Datasheet	IRF7343PBF PDF File

Overview

PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 6 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified thro...

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IRF7343PBF HEXFET Power MOSFET - International Rectifier

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