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IRF7477PBF

International Rectifier
Part Number IRF7477PBF
Manufacturer International Rectifier
Published May 30, 2007
Description HEXFET Power MOSFET
Detailed Description PD- 95334 SMPS MOSFET Applications l High Frequency Synchronous
Datasheet PDF File IRF7477PBF PDF File

IRF7477PBF
IRF7477PBF



Overview
PD- 95334 SMPS MOSFET Applications l High Frequency Synchronous Buck Converters for Computers and Communications l Lead-Free IRF7477PbF HEXFET® Power MOSFET VDSS 30V RDS(on) max (mW) 8.
5@VGS = 10V 10@VGS = 4.
5V ID 14A 11A Benefits Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits l S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max.
30 ± 20 14 11 110 2.
5 1.
6 0.
02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 50 Units °C/W Notes  through „ are on page 8 www.
irf.
com 1 09/21/04 IRF7477PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.
0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
029 6.
5 7.
7 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 8.
5 VGS = 10V, ID = 14A ƒ mΩ 10 VGS = 4.
5V, ID = 11A ƒ 2.
5 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Dr...



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