N-Channel Transistor - Diodes Incorporated
Description
DMN5L06W
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
· · · · · · · · ·
N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3)
K G G H M S A D B C
SOT-323 Dim A B C D E G H J K
J D F L
Min 0.
25 1.
15 2.
00 0.
30 1.
20 1.
80 0.
0 0.
90 0.
25 0.
10 0°
Max 0.
40 1.
35 2.
20 0.
40 1.
40 2.
20 0.
10 1.
00 0.
40 0.
18 8°
0.
65 Nominal
Mechanical Data
· · · · · · · ·
Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.
006 grams (approximate)
L M a
Drain
All Dimensions in mm
Gate
Source EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 ±20 ±40 280 1.
5 200 625 -55 to +150 Units V V V mA A mW °C/W °C
Characteristic Drain-Gate Voltage RGS £ 1.
0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1.
Device mounted on FR-4 PCB, 1 inch x 0.
85 inch x 0.
062 inch; pad layout as shown on Diodes Inc.
suggested pad layout document AP02001, which can be found on our website at http://www.
diodes.
com/datasheets/ap02001.
pdf.
2.
No purposefully added lead.
3.
Diodes Inc’s “Green” policy can be found on our website at http://www.
diodes.
com/products/lead_free/index.
php.
DS30613 Rev.
3 - 2
1 of 4 www.
diodes.
com
DMN5L06W
ã Diodes Incorporated
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