• Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA •Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Powe...
EM565168 PDF File
