ULTRAFAST SILICON POWER RECTIFIER - Microsemi Corporation
Description
TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646 Devices 1N6774 1N6775 1N6776 1N6777 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Working Peak Reverse Voltage Forward Current TC = +100°C(1) Forward Current Surge Peak TP = 8.
30C Operating & Storage Junction Temperature
Symbol 1N6774 1N6775 1N6776 1N6777 Unit
VRWM IF IFSM Top, Tstg Symbol RθJC RθJA 50 100 150 15 180 -65 to +150 Max.
2.
0 40 200 Vdc Adc Apk 0 C Unit C/W C/W
*See appendix A for package
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate at 300 mA/0C above TC = +1000C
0
0
TO-257* (2-PIN-ISOLATED)
ELECTRICAL CHARACTERISTICS (TC = +250C Unless Otherwise Noted)
outline
Characteristics Forward Voltage IF = 8.
0 Adc, pulsed IF = 15 Adc, pulsed Reverse Current Leakage VR = 0.
8 of VRWM Thermal Impedance t t IM =15 mAdc; IH = 9.
9 Adc; H = 200 ms; MD = 35 µs; VH = 1 Vdc Breakdown Voltage IR = 10 µAdc 1N6774 1N6775 1N6776 1N6777 Junction Capacitance VR = 5.
0 Vdc, f = 1.
0 MHz Reverse Recovery Time IF = 1.
0 Adc; di/dt = 50 A/µs
Symbol VF IR ZØJX
Min.
Max.
1.
00 1.
15 10
Unit Vdc µAdc
0
C/W
1.
8 50 100 150 200 300 35
VBR
Vdc
CJ trr
pF ηs
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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