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NJ26A

InterFET
Part Number NJ26A
Manufacturer InterFET
Description Silicon Junction Field-Effect Transistor
Published May 11, 2007
Detailed Description F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum r...
Datasheet PDF File NJ26A PDF File

NJ26A
NJ26A

Overview
F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
016" X 0.
016" All Round Bond Pads = 0.
0028" All Square Bond Pads = 0.
004" Substrate is also Gate.
Devices in this Databook based on the NJ26A Process.
Datasheet 2N4416, 2N4416A www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 6 4 1 4 4.
5 1.
2 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –1 Min – 30 Typ – 40 – 10 – 100 22 –5 Max Unit V pA mA V NJ26A Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 15V, VGS...


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