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IRFZ24VS

Part Number	IRFZ24VS
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 11, 2007
Detailed Description	PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dy...
Datasheet	IRFZ24VS PDF File

Overview

PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak...

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