G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2. 70 3. 10 2. 40 2. 80 1. 40 1. 60 0. 35 0. 50 0 0. 10 0. 45 0. 55
REF. G H K J L M
Millimeter Min. Max. 1. 90 REF. 1. 00 1. 30 0. 10 0. 20 0. 40 0. 85 1. 15 0 10
Absolute Maximum Ratings at Ta = 25
Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp 50us) Continuous Drain Current Pulsed Drain Current (Ta=25 Power Dissipation ) Ta=25 Ta=100 (2) Ta=25 Ta=100 Symbol Tj, Tstg Ratings -55 ~ +150 60 V V V mA mA W /W 20 40 115 73 800 0. 2 0. 08 625 Unit
VGS VGSM
(1) (1)
ID IDM PD RthJA
Thermal Resistance ,Junction-to-Ambient
Characteristics
Parameter
at Ta = 25
Symbol BVDSS VGS(th) IGSS Idss ID(ON) Min. 60 1 500 80 Typ. Max. 2. 5 100 1 7. 5 13. 5 7. 5 13. 5 50 25 5 mS pF pF pF VDS=25V, VGS =0V, f=1MHz Id=500mA, VGS=10V VDS>2 VDS(ON), ID=200mA Unit V V nA uA mA Test Conditions VGS=0, ID=10uA VDS=2. 5V, ID=0. 25mA VGS= 20V, VDS=0 VDS=60V, VGS=0 VDS =7. 5V ,VGS=10V Id=50mA, VGS =5V 25 125 25 125
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current
Static Drain-Source on-State Resistance
RDS(ON)
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
GFS Ciss Coss Crss
2/3
(1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width 300us, Duty cycle 2%.
Characteristics Curve
3/3
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G2N7002 PDF File
