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CEB21A3

CET
Part Number CEB21A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP21A3/CEB21A3 Nov. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON...
Datasheet PDF File CEB21A3 PDF File

CEB21A3
CEB21A3

Overview
CEP21A3/CEB21A3 Nov.
2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON)=45mΩ @VGS=10V.
RDS(ON)=70mΩ @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D 4 D G G S G D S S CEP SERIES TO-220 CEB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C ...


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