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CEM4487

CET
Part Number CEM4487
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VG...
Datasheet PDF File CEM4487 PDF File

CEM4487
CEM4487

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.
2A, RDS(ON) = 66mΩ @VGS = -10V.
RDS(ON) = 105mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 CEM4487 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C ±20 -4.
2 -17 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter The...


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