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FDFMA2P029Z

Fairchild Semiconductor
Part Number FDFMA2P029Z
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published May 3, 2007
Detailed Description FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Fe...
Datasheet PDF File FDFMA2P029Z PDF File

FDFMA2P029Z
FDFMA2P029Z

Overview
FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.
1A, 95mΩ Features MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.
It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
„ Max rDS(on) = 95mΩ at VGS = –4.
5V, I...


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